Cypress Semiconductor Corp. Memory CYD18S18V18-200BBAXI

Description
IC SRAM 18MBIT PARALLEL 256FBGA
Datasheet
Description
IC SRAM 18MBIT PARALLEL 256FBGA
Datasheet

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IC SRAM 18MBIT PARALLEL 256FBGA

IC SRAM 18MBIT PARALLEL 256FBGA

Supplier's Site Datasheet
Memory - CYD18S18V18-200BBAXI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Synchronous Memory IC 18Mbit Parallel 200 MHz 3.3 ns 256-FBGA (17x17)

SRAM - Dual Port, Synchronous Memory IC 18Mbit Parallel 200 MHz 3.3 ns 256-FBGA (17x17)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - CYD18S18V18-200BBAXI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
CYD18S18V18-200BBAXI
Integrated Circuits (ICs) - Memory - Memory CYD18S18V18-200BBAXI
IC SRAM 18MBIT PARALLEL 256FBGA

IC SRAM 18MBIT PARALLEL 256FBGA

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number CYD18S18V18-200BBAXI CYD18S18V18-200BBAXI CYD18S18V18-200BBAXI
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM - Dual Port, Synchronous; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Data Rate 200 MHz 200 MHz
Access Time 3.3 ns 3.3 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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