Cypress Semiconductor Corp. Memory CYD18S18V18-200BBAXI

Description
IC SRAM 18MBIT PARALLEL 256FBGA
Datasheet
Description
IC SRAM 18MBIT PARALLEL 256FBGA
Datasheet

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Description
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IC SRAM 18MBIT PARALLEL 256FBGA

IC SRAM 18MBIT PARALLEL 256FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - CYD18S18V18-200BBAXI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
CYD18S18V18-200BBAXI
Integrated Circuits (ICs) - Memory - Memory CYD18S18V18-200BBAXI
IC SRAM 18MBIT PARALLEL 256FBGA

IC SRAM 18MBIT PARALLEL 256FBGA

Supplier's Site
Memory - CYD18S18V18-200BBAXI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Synchronous Memory IC 18Mbit Parallel 200 MHz 3.3 ns 256-FBGA (17x17)

SRAM - Dual Port, Synchronous Memory IC 18Mbit Parallel 200 MHz 3.3 ns 256-FBGA (17x17)

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Technical Specifications

  ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number CYD18S18V18-200BBAXI CYD18S18V18-200BBAXI CYD18S18V18-200BBAXI
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM - Dual Port, Synchronous; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Data Rate 200 MHz 200 MHz
Access Time 3.3 ns 3.3 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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