Cypress Semiconductor Corp. Memory CYD18S18V18-200BBAXI

Description
SRAM - Dual Port, Synchronous Memory IC 18Mbit Parallel 200 MHz 3.3 ns 256-FBGA (17x17)
Datasheet
Description
SRAM - Dual Port, Synchronous Memory IC 18Mbit Parallel 200 MHz 3.3 ns 256-FBGA (17x17)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CYD18S18V18-200BBAXI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Synchronous Memory IC 18Mbit Parallel 200 MHz 3.3 ns 256-FBGA (17x17)

SRAM - Dual Port, Synchronous Memory IC 18Mbit Parallel 200 MHz 3.3 ns 256-FBGA (17x17)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - CYD18S18V18-200BBAXI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
CYD18S18V18-200BBAXI
Integrated Circuits (ICs) - Memory - Memory CYD18S18V18-200BBAXI
IC SRAM 18MBIT PARALLEL 256FBGA

IC SRAM 18MBIT PARALLEL 256FBGA

Supplier's Site
IC SRAM 18MBIT PARALLEL 256FBGA

IC SRAM 18MBIT PARALLEL 256FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Memory Chips Memory Chips Memory Chips
Product Number CYD18S18V18-200BBAXI CYD18S18V18-200BBAXI CYD18S18V18-200BBAXI
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip SRAM - Dual Port, Synchronous; SRAM Chip
Access Time 3.3 ns 3.3 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 18000 kbits 18000 kbits 18000 kbits
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