Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory - Memory CYD09S18V18-200BBXI

Description
Dual-Port SRAM, 512KX18, 3.3ns PBGA256
Request a Quote Datasheet
Description
Dual-Port SRAM, 512KX18, 3.3ns PBGA256
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - CYD09S18V18-200BBXI - Rochester Electronics
Newburyport, MA, United States
Dual-Port SRAM, 512KX18, 3.3ns PBGA256

Dual-Port SRAM, 512KX18, 3.3ns PBGA256

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - CYD09S18V18-200BBXI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
CYD09S18V18-200BBXI
Integrated Circuits (ICs) - Memory - Memory CYD09S18V18-200BBXI
IC SRAM 9MBIT PARALLEL 256FBGA

IC SRAM 9MBIT PARALLEL 256FBGA

Supplier's Site

Technical Specifications

  Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number CYD09S18V18-200BBXI CYD09S18V18-200BBXI
Product Name Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip Volatile; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MT4C1004J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
FIFOs Memory - SN74ACT7201LA15DV - Quarktwin Technology Ltd.
Specs
Data Rate 40 MHz
Access Time 15 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
Memory - 27C128-15I/K - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 150 ns
Density 128 kbits
View Details
Flash Memory - 1882547 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 256 k
Bits per Word 8 bits
View Details