Cypress Semiconductor Corp. Memory - SRAM - CY7C1420KV18-250BZC CY7C1420KV18-250BZC

Description
DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165
Request a Quote Datasheet
Description
DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - CY7C1420KV18-250BZC - Rochester Electronics
Newburyport, MA, United States
DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165

DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165

Supplier's Site Datasheet
Memory - SRAM - CY7C1420KV18-250BZC - 1165176-CY7C1420KV18-250BZC - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - CY7C1420KV18-250BZC
1165176-CY7C1420KV18-250BZC
Memory - SRAM - CY7C1420KV18-250BZC 1165176-CY7C1420KV18-250BZC
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 1165176-CY7C1420KV18 -250BZC Packaging: Tray Operating Temperature Range: 0°C ~ 70°C (TA) Package: 165-LBGA Mounting: SMD Technology: SRAM - Synchronous, DDR II Operating Supply Voltage: 1.7 V ~ 1.9 V Memory Type: Volatile Memory Size: 36Mb (1M x 36) Family Name: CY7C1420KV18 Categories: Integrated Circuits (ICs) Memory Format: SRAM Manufacturer Homepage: www.cypress.com Clock Frequency: 250MHz Memory Interface: Parallel Manufacturer Package: 165-FBGA (13x15) Alternative Parts (Cross-Reference): GS8342R36AE-250I; GS8342R36AGE-250I; GS8342R36AE-250; Introduction Date: December 03, 2003 ECCN: 3A991.b.2.a Country of Origin: Philippines, Taiwan, Thailand Estimated EOL Date: 2024 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: Cypress Semiconductor Corp
Win Source Part Number: 1165176-CY7C1420KV18-250BZC
Packaging: Tray
Operating Temperature Range: 0°C ~ 70°C (TA)
Package: 165-LBGA
Mounting: SMD
Technology: SRAM - Synchronous, DDR II
Operating Supply Voltage: 1.7 V ~ 1.9 V
Memory Type: Volatile
Memory Size: 36Mb (1M x 36)
Family Name: CY7C1420KV18
Categories: Integrated Circuits (ICs)
Memory Format: SRAM
Manufacturer Homepage: www.cypress.com
Clock Frequency: 250MHz
Memory Interface: Parallel
Manufacturer Package: 165-FBGA (13x15)
Alternative Parts (Cross-Reference): GS8342R36AE-250I; GS8342R36AGE-250I; GS8342R36AE-250;
Introduction Date: December 03, 2003
ECCN: 3A991.b.2.a
Country of Origin: Philippines, Taiwan, Thailand
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - CY7C1420KV18-250BZC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
CY7C1420KV18-250BZC
Integrated Circuits (ICs) - Memory - Memory CY7C1420KV18-250BZC
IC SRAM 36MBIT PAR 165FBGA

IC SRAM 36MBIT PAR 165FBGA

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number CY7C1420KV18-250BZC 1165176-CY7C1420KV18-250BZC CY7C1420KV18-250BZC
Product Name Memory - SRAM - CY7C1420KV18-250BZC Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip Volatile; SRAM Chip Volatile; SRAM Chip
Logic Family CMOS
Package Type BGA; BGA
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

 - 9403ASDMQB - Rochester Electronics
Specs
Memory Category FIFO
Package Type DIP; DIP24
View Details
3 suppliers
Memory - AS27C010A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EPROM; UVEPROM
Access Time 41263 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882551 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - 577578-003-00 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers