The CY7C1383B-117AC is a synchronous burst SRAM with a capacity of 1M x 18 bits, designed for high-speed applications. It features a maximum access time of 7.5 ns and operates at a clock speed of 117 MHz, making it suitable for performance-critical systems. The device supports a 3.3V power supply and includes functionalities such as byte write enable, global write control, and chip enable for address pipelining. It also offers burst control pins for interleaved or linear burst sequences and has an internally self-timed write cycle. The memory is packaged in a 100-lead thin quad flat pack, ensuring a compact design for integration into various applications. The device is JEDEC-standard JESD8-5 compatible, which facilitates its use in a wide range of electronic systems.
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 117 MHz 7.5 ns 100-TQFP (14x20)
STANDARD SRAM, 1MX18
| Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Memory Chips | Memory Chips |
| Product Number | CY7C1383B-117AC | CY7C1383B-117AC |
| Product Name | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Access Time | 7.5 ns | 7.5 ns |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) |
| Density | 18000 kbits | 18000 kbits |
