Cypress Semiconductor Corp. Memory CY7C1370BV25-133BGC

Description
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 133 MHz 4.2 ns 119-PBGA (14x22)
Datasheet
Description
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 133 MHz 4.2 ns 119-PBGA (14x22)
Datasheet

Suppliers

Company
Product
Description
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Memory - CY7C1370BV25-133BGC - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 133 MHz 4.2 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 133 MHz 4.2 ns 119-PBGA (14x22)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - CY7C1370BV25-133BGC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
CY7C1370BV25-133BGC
Integrated Circuits (ICs) - Memory CY7C1370BV25-133BGC
ZBT SRAM, 512KX36, 4.2NS

ZBT SRAM, 512KX36, 4.2NS

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number CY7C1370BV25-133BGC CY7C1370BV25-133BGC
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 4.2 ns 4.2 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 18000 kbits 18000 kbits
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