Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory - Memory CY7C1318CV18-250BZI

Description
DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165
Request a Quote Datasheet
Description
DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - CY7C1318CV18-250BZI - Rochester Electronics
Newburyport, MA, United States
DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165

DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - CY7C1318CV18-250BZI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
CY7C1318CV18-250BZI
Integrated Circuits (ICs) - Memory - Memory CY7C1318CV18-250BZI
IC SRAM 18MBIT PAR 165FBGA

IC SRAM 18MBIT PAR 165FBGA

Supplier's Site

Technical Specifications

  Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number CY7C1318CV18-250BZI CY7C1318CV18-250BZI
Product Name Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip Volatile; SRAM Chip
Logic Family CMOS
Package Type BGA; BGA165
Unlock Full Specs
to access all available technical data

Similar Products

Memory - S29GL032N11TFIV10 - Quarktwin Technology Ltd.
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
SDRAM - 1882578 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Memory - 8928919956-01 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - 71256L55TDB - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 55 ns
Density 256 kbits
View Details