Cypress Semiconductor Corp. Memory CY7C109BN-20VC

Description
SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 32-SOJ
Description
SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 32-SOJ
Datasheet
Datasheet Summary
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The CY7C109BN-20VC is a high-performance CMOS static RAM organized as 128K words by 8 bits, offering a maximum access time of 20 ns. It features low active power consumption of 495 mW and low standby power of 55 mW, making it suitable for applications requiring efficient power usage. The device supports automatic power-down when deselected, enhancing its energy efficiency further. It is compatible with TTL logic levels and allows for easy memory expansion through its Chip Enable (CE1, CE2) and Output Enable (OE) options. The memory is available in a 32-lead (400-mil) molded SOJ package, making it suitable for various applications in commercial environments. The operating temperature range is from 0¬8C to +70¬8C, and it operates at a supply voltage of 5V ¬± 10%. This product is ideal for engineers looking for reliable and efficient static RAM solutions for their projects.

Datasheet Summary
Powered by GS/AI

The CY7C109BN-20VC is a high-performance CMOS static RAM organized as 128K words by 8 bits, offering a maximum access time of 20 ns. It features low active power consumption of 495 mW and low standby power of 55 mW, making it suitable for applications requiring efficient power usage. The device supports automatic power-down when deselected, enhancing its energy efficiency further. It is compatible with TTL logic levels and allows for easy memory expansion through its Chip Enable (CE1, CE2) and Output Enable (OE) options. The memory is available in a 32-lead (400-mil) molded SOJ package, making it suitable for various applications in commercial environments. The operating temperature range is from 0¬8C to +70¬8C, and it operates at a supply voltage of 5V ¬± 10%. This product is ideal for engineers looking for reliable and efficient static RAM solutions for their projects.

Suppliers

Company
Product
Description
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Memory - CY7C109BN-20VC - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 32-SOJ

SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 32-SOJ

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Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number CY7C109BN-20VC
Product Name Memory
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Operating Temperature 0 to 70 C (32 to 158 F)
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