Cypress Semiconductor Corp. Memory - SRAM - CY7C1041CV33-10BAC CY7C1041CV33-10BAC

Description
Win Source Part Number: 957512-CY7C1041CV33- 10BAC Series: * Categories: Memory
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Description
Win Source Part Number: 957512-CY7C1041CV33- 10BAC Series: * Categories: Memory
Request a Quote
Datasheet
Datasheet Summary
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The CY7C1041CV33-10BAC is a 4-Mbit (256K x 16) CMOS Static RAM designed for high-performance applications. It features a maximum access time of 10 ns and operates with low active power consumption, rated at a maximum of 324 mW. The device supports a wide range of temperature specifications, including commercial (0°C to 70°C), industrial (-40°C to 85°C), and automotive grades (-40°C to 125°C). This SRAM is organized as 262,144 words by 16 bits, allowing for flexible data handling with separate byte enable controls (BLE and BHE) for reading and writing operations. The device is available in multiple package types, including a 48-ball fine-pitch ball grid array (FBGA), a 44-pin TSOP II, and a 44-pin SOJ, accommodating various design requirements. The CY7C1041CV33-10BAC also includes features such as automatic power-down when deselected, TTL-compatible inputs and outputs, and easy memory expansion capabilities. It is suitable for applications requiring fast access times and low power consumption, making it a viable option for engineers looking for reliable SRAM solutions.

Datasheet Summary
Powered by GS/AI

The CY7C1041CV33-10BAC is a 4-Mbit (256K x 16) CMOS Static RAM designed for high-performance applications. It features a maximum access time of 10 ns and operates with low active power consumption, rated at a maximum of 324 mW. The device supports a wide range of temperature specifications, including commercial (0°C to 70°C), industrial (-40°C to 85°C), and automotive grades (-40°C to 125°C). This SRAM is organized as 262,144 words by 16 bits, allowing for flexible data handling with separate byte enable controls (BLE and BHE) for reading and writing operations. The device is available in multiple package types, including a 48-ball fine-pitch ball grid array (FBGA), a 44-pin TSOP II, and a 44-pin SOJ, accommodating various design requirements. The CY7C1041CV33-10BAC also includes features such as automatic power-down when deselected, TTL-compatible inputs and outputs, and easy memory expansion capabilities. It is suitable for applications requiring fast access times and low power consumption, making it a viable option for engineers looking for reliable SRAM solutions.

Suppliers

Company
Product
Description
Supplier Links
Memory - SRAM - CY7C1041CV33-10BAC - 957512-CY7C1041CV33-10BAC - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - CY7C1041CV33-10BAC
957512-CY7C1041CV33-10BAC
Memory - SRAM - CY7C1041CV33-10BAC 957512-CY7C1041CV33-10BAC
Win Source Part Number: 957512-CY7C1041CV33- 10BAC Series: * Categories: Memory

Win Source Part Number: 957512-CY7C1041CV33-10BAC
Series: *
Categories: Memory

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Integrated Circuits (ICs) - Memory - Memory - CY7C1041CV33-10BAC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
CY7C1041CV33-10BAC
Integrated Circuits (ICs) - Memory - Memory CY7C1041CV33-10BAC
IC SRAM 4MBIT PARALLEL 48FBGA

IC SRAM 4MBIT PARALLEL 48FBGA

Supplier's Site
Memory - CY7C1041CV33-10BAC - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-FBGA (7x8.5)

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-FBGA (7x8.5)

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 957512-CY7C1041CV33-10BAC CY7C1041CV33-10BAC CY7C1041CV33-10BAC
Product Name Memory - SRAM - CY7C1041CV33-10BAC Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 10 ns
Density 4000 kbits 4000 kbits
Package Type BGA BGA; 48-TFBGA
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