The CY7C1019BV33-12VI is a high-performance CMOS static RAM organized as 131,072 words by 8 bits, offering a maximum access time of 12 ns. It features an automatic power-down function that reduces power consumption when the device is deselected, making it suitable for applications where power efficiency is critical. The device supports easy memory expansion through active LOW Chip Enable (CE) and Output Enable (OE) options, along with three-state drivers. This memory chip operates at a supply voltage of 3.3V ¬± 10% and is available in a 32-pin TSOP Type II package. It has a maximum operating current of 160 mA and a maximum standby current of 5 mA. The device is functionally equivalent to the CY7C1019V33 and CY7C1018V33 models, providing flexibility in design choices. The operating temperature range is from 0¬8C to +70¬8C, making it suitable for commercial applications. Engineers considering this product should note its specifications for read and write cycles, including a read cycle time of 12 ns and a write cycle time of 12 ns, which may influence performance in high-speed applications.
128K X 8 STATIC RAM
SRAM - Asynchronous Memory IC 1Mbit Parallel 12 ns 32-SOJ
128K X 8 STATIC RAM
| Rochester Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | CY7C1019BV33-12VI | CY7C1019BV33-12VI | CY7C1019BV33-12VI |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | |
| Memory Category | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Package Type | SOJ; SOJ32 | 32-BSOJ (0.400\", 10.16mm Width) | SOJ |
| Access Time | 12 ns | 12 ns |