Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory CY7C1019BV33-12VI

Description
128K X 8 STATIC RAM
Request a Quote
Description
128K X 8 STATIC RAM
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The CY7C1019BV33-12VI is a high-performance CMOS static RAM organized as 131,072 words by 8 bits, offering a maximum access time of 12 ns. It features an automatic power-down function that reduces power consumption when the device is deselected, making it suitable for applications where power efficiency is critical. The device supports easy memory expansion through active LOW Chip Enable (CE) and Output Enable (OE) options, along with three-state drivers. This memory chip operates at a supply voltage of 3.3V ¬± 10% and is available in a 32-pin TSOP Type II package. It has a maximum operating current of 160 mA and a maximum standby current of 5 mA. The device is functionally equivalent to the CY7C1019V33 and CY7C1018V33 models, providing flexibility in design choices. The operating temperature range is from 0¬8C to +70¬8C, making it suitable for commercial applications. Engineers considering this product should note its specifications for read and write cycles, including a read cycle time of 12 ns and a write cycle time of 12 ns, which may influence performance in high-speed applications.

Datasheet Summary
Powered by GS/AI

The CY7C1019BV33-12VI is a high-performance CMOS static RAM organized as 131,072 words by 8 bits, offering a maximum access time of 12 ns. It features an automatic power-down function that reduces power consumption when the device is deselected, making it suitable for applications where power efficiency is critical. The device supports easy memory expansion through active LOW Chip Enable (CE) and Output Enable (OE) options, along with three-state drivers. This memory chip operates at a supply voltage of 3.3V ¬± 10% and is available in a 32-pin TSOP Type II package. It has a maximum operating current of 160 mA and a maximum standby current of 5 mA. The device is functionally equivalent to the CY7C1019V33 and CY7C1018V33 models, providing flexibility in design choices. The operating temperature range is from 0¬8C to +70¬8C, making it suitable for commercial applications. Engineers considering this product should note its specifications for read and write cycles, including a read cycle time of 12 ns and a write cycle time of 12 ns, which may influence performance in high-speed applications.

Suppliers

Company
Product
Description
Supplier Links
 - CY7C1019BV33-12VI - Rochester Electronics
Newburyport, MA, United States
128K X 8 STATIC RAM

128K X 8 STATIC RAM

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - CY7C1019BV33-12VI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
CY7C1019BV33-12VI
Integrated Circuits (ICs) - Memory CY7C1019BV33-12VI
128K X 8 STATIC RAM

128K X 8 STATIC RAM

Supplier's Site
Memory - CY7C1019BV33-12VI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 12 ns 32-SOJ

SRAM - Asynchronous Memory IC 1Mbit Parallel 12 ns 32-SOJ

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number CY7C1019BV33-12VI CY7C1019BV33-12VI CY7C1019BV33-12VI
Product Name Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Package Type SOJ; SOJ32 SOJ 32-BSOJ (0.400\", 10.16mm Width)
Access Time 12 ns 12 ns
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882557 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - 71V124SA15PHG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Density 1000 kbits
View Details
Integrated Circuits (ICs) - Memory - Memory - 10415FC10 - Acme Chip Technology Co., Limited
Specs
Memory Category Volatile; SRAM Chip
Cycle Time 10 ns
Density 1 kbits
View Details
2 suppliers