Cypress Semiconductor Corp. Memory CY14E256L-SZ35XI

Description
NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 35 ns 32-SOIC
  • Memory - CY14E256L-SZ35XI - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 35 ns 32-SOIC
Datasheet

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Memory - CY14E256L-SZ35XI - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
CY14E256L-SZ35XI
Memory CY14E256L-SZ35XI
NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 35 ns 32-SOIC

NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 35 ns 32-SOIC

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Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number CY14E256L-SZ35XI
Product Name Memory
Memory Category NVSRAM; NVSRAM; SRAM Chip
Access Time 35 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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