Cypress Semiconductor Corp. Memory 5962-9232404MYA

Description
NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 55 ns 28-LCC (13.97x8.89)
  • Memory - 5962-9232404MYA - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 55 ns 28-LCC (13.97x8.89)

Suppliers

Company
Product
Description
Supplier Links
Memory - 5962-9232404MYA - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
5962-9232404MYA
Memory 5962-9232404MYA
NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 55 ns 28-LCC (13.97x8.89)

NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 55 ns 28-LCC (13.97x8.89)

Buy Now

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number 5962-9232404MYA
Product Name Memory
Memory Category NVSRAM; NVSRAM; SRAM Chip
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 448-CY62126EV30LL-55BVXETTR-ND - DigiKey
Infineon Technologies AG
Memory
CY62126EV30LL-55BVXET
Specs
Memory Category SRAM Chip
Operating Temperature -40 to 125 C (-40 to 257 F)
Density 1000 kbits
View Details
4 suppliers
Memory - 6116LA20TPG - Lingto Electronic Limited
Rochester Electronics
Memory
6116LA20TPG
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 16 kbits
View Details
SN74ACT2226 64 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2226DWR - Texas Instruments
Texas Instruments
SN74ACT2226 64 x 1 x 2 dual independent synchronous FIFO memories
SN74ACT2226DWR
Specs
Memory Category FIFO
Package Type SOIC
View Details
6 suppliers
Flash Memory - 1882828P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882828P
Specs
Memory Category Flash
Density 64000 kbits
Package Type USON
View Details