CSA Group Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon ISO 17560:2014

Description
ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.
  • Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon - ISO 17560:2014 - CSA Group
    CSA Group
Description
ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.

Suppliers

Company
Product
Description
Supplier Links
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon - ISO 17560:2014 - CSA Group
CSA Group
Toronto, Ontario, Canada
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
ISO 17560:2014
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon ISO 17560:2014
ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.

ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.

Supplier's Site

Technical Specifications

  CSA Group
Product Category Standards and Technical Documents
Product Number ISO 17560:2014
Product Name Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
Unlock Full Specs
to access all available technical data

Similar Products