CSA Group Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials ISO 14237:2010

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ISO 14237:2010 specifies a secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1 x 1016 atoms/cm3 to 1 x 1020 atoms/cm3.
  • Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials - ISO 14237:2010 - CSA Group
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Description
ISO 14237:2010 specifies a secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1 x 1016 atoms/cm3 to 1 x 1020 atoms/cm3.

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Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials - ISO 14237:2010 - CSA Group
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Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials
ISO 14237:2010
Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials ISO 14237:2010
ISO 14237:2010 specifies a secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1 x 1016 atoms/cm3 to 1 x 1020 atoms/cm3.

ISO 14237:2010 specifies a secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1 x 1016 atoms/cm3 to 1 x 1020 atoms/cm3.

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  CSA Group
Product Category Standards and Technical Documents
Product Number ISO 14237:2010
Product Name Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials
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