CSA Group Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon ISO 12406:2010

Description
ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.
  • Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon - ISO 12406:2010 - CSA Group
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Description
ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.

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Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon - ISO 12406:2010 - CSA Group
CSA Group
Toronto, Ontario, Canada
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon
ISO 12406:2010
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon ISO 12406:2010
ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.

ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.

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  CSA Group
Product Category Standards and Technical Documents
Product Number ISO 12406:2010
Product Name Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon
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