CSA Group Semiconductor devices - Flexible and stretchable semiconductor devices - Part 3: Evaluation of thin film transistor characteristics on flexible substrates under bulging IEC 62951-3:2018

Description
IEC 62951-3:2018(E) specifies the method for evaluating thin film transistor characteristics on flexible substrates under bulging. The thin film transistor is fabricated on flexible substrates, including polyethylene terephthalate (PET), polyimide (PI), elastomer and others. The stress is applied by applying a uniformly-distribute d pressure to the flexible substrate using the equipment.
  • Semiconductor devices - Flexible and stretchable semiconductor devices - Part 3: Evaluation of thin film transistor characteristics on flexible substrates under bulging - IEC 62951-3:2018 - CSA Group
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Description
IEC 62951-3:2018(E) specifies the method for evaluating thin film transistor characteristics on flexible substrates under bulging. The thin film transistor is fabricated on flexible substrates, including polyethylene terephthalate (PET), polyimide (PI), elastomer and others. The stress is applied by applying a uniformly-distribute d pressure to the flexible substrate using the equipment.

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Semiconductor devices - Flexible and stretchable semiconductor devices - Part 3: Evaluation of thin film transistor characteristics on flexible substrates under bulging - IEC 62951-3:2018 - CSA Group
CSA Group
Toronto, Ontario, Canada
Semiconductor devices - Flexible and stretchable semiconductor devices - Part 3: Evaluation of thin film transistor characteristics on flexible substrates under bulging
IEC 62951-3:2018
Semiconductor devices - Flexible and stretchable semiconductor devices - Part 3: Evaluation of thin film transistor characteristics on flexible substrates under bulging IEC 62951-3:2018
IEC 62951-3:2018(E) specifies the method for evaluating thin film transistor characteristics on flexible substrates under bulging. The thin film transistor is fabricated on flexible substrates, including polyethylene terephthalate (PET), polyimide (PI), elastomer and others. The stress is applied by applying a uniformly-distribute d pressure to the flexible substrate using the equipment.

IEC 62951-3:2018(E) specifies the method for evaluating thin film transistor characteristics on flexible substrates under bulging. The thin film transistor is fabricated on flexible substrates, including polyethylene terephthalate (PET), polyimide (PI), elastomer and others. The stress is applied by applying a uniformly-distributed pressure to the flexible substrate using the equipment.

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Technical Specifications

  CSA Group
Product Category Standards and Technical Documents
Product Number IEC 62951-3:2018
Product Name Semiconductor devices - Flexible and stretchable semiconductor devices - Part 3: Evaluation of thin film transistor characteristics on flexible substrates under bulging
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