CSA Group Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) IEC 62417:2010

Description
IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.
  • Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) - IEC 62417:2010 - CSA Group
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Description
IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

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Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) - IEC 62417:2010 - CSA Group
CSA Group
Toronto, Ontario, Canada
Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
IEC 62417:2010
Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) IEC 62417:2010
IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

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Technical Specifications

  CSA Group
Product Category Standards and Technical Documents
Product Number IEC 62417:2010
Product Name Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
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