CSA Group Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life IEC 60749-23:2004+AMD1:2011 CSV

Description
IEC 60749-23:2004+A1:201 1 is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this standard. This consolidated version consists of the first edition (2004) and its amendment 1 (2011). Therefore, no need to order amendment in addition to this publication.
Description
IEC 60749-23:2004+A1:201 1 is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this standard. This consolidated version consists of the first edition (2004) and its amendment 1 (2011). Therefore, no need to order amendment in addition to this publication.

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Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life - IEC 60749-23:2004+AMD1:2011 CSV - CSA Group
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Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life
IEC 60749-23:2004+AMD1:2011 CSV
Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life IEC 60749-23:2004+AMD1:2011 CSV
IEC 60749-23:2004+A1:201 1 is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this standard. This consolidated version consists of the first edition (2004) and its amendment 1 (2011). Therefore, no need to order amendment in addition to this publication.

IEC 60749-23:2004+A1:2011 is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this standard. This consolidated version consists of the first edition (2004) and its amendment 1 (2011). Therefore, no need to order amendment in addition to this publication.

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Technical Specifications

  CSA Group
Product Category Standards and Technical Documents
Product Number IEC 60749-23:2004+AMD1:2011 CSV
Product Name Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life
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