CRYSTECH, Inc. RTP Q-Switch Crystals Components

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RTP Q-Switch Crystals Components -  - CRYSTECH, Inc.
Qingdao, China
RTP Q-Switch Crystals Components
" RTP (Rubidium Titanyle Phosphate - RbTiOPO4) is an isomorph of KTP crystal which is used in nonlinear and Electro Optical applications. Through years of research and development, CRYSTECH has achieved great advances in growing techniques of RTP crystals. We are able to provide excellent RTP crystals both in matched pairs or single crystals. APPLICATION:? Q-switch (Laser Ranging, Laser Radar, medical laser, Industrial Laser)? Laser power/phase modulation? Pulse Picker ADVANTAGE:? An excellent crystal for Electro Optical applications at high repetition rate? Large nonlinear optical and electro-optical coefficients? Low half-wave voltage? No Piezoelectric Ringing? high damage threshold;? High Extinction Ratio? Non-hygroscopic Dimension Tolerance W(+/-0.1) * H(+/-0.1) * L(+0.5/-0.1) mm Angle Tolerance +/-0.15° Perpendicularity =10'Scratch / Dig 20/10 Chamfer =0.2mmx45°Parallelis m =5? Chip =0.1mm Flatness ?/10@633nm CA =90%TWD ?/6@633nm Electrode Ti or AuExtinction Ratio >20dB Coating AR@1064nm(R<0.2%), or customized upon request Damage Threshold 600MW/cm² 10ns 10Hz at 1064nmType Size of Single Crystal(mm) Length of Holder(mm) Half-wave voltage(V)QR2205A 2X2X5 12 1600VQR3305A 3X3X5 14 2400VQR4405A 4X4X5 14 3200VQR4410A 4X4X10 25 1600VQR6605A 6X6X5 14 4800VQR6610A 6X6X10 25 2400VQR8805A 8X8X5 14 6400VQR8810A 8X8X10 25 3200VQR1005A 10X10X5 14 8000VPhysical and Optical Properties Crystal structure Orthorhombic Cell Parameters a = 12.96 Å; b =10.56 Å; c =6.49 ÅMohs hardness 5Density, g/cm3 3.6Melting Point: ~ 1000°CFerroeletric transition temp. ~ 810°CColor Colorless Thermal Expansion Coefficients (/K) ax=1.01x10-5, ay =1.37x10-5, az =-4.17x10-6Dielectri c Constant Eeff= 13.0Thermo-optical coefficients (d?/dT) -0.029 nm / °CElectro-optic constants Y-cut: r51=38.5 pm/V X-cut: r33=35 pm/V,r23=12.5 pm/V, r13=10.6 pm/VNonlinear Coefficients: d15 = 2.0 pm/V; d24 = 3.6 pm/V; d31= 2.0 pm/V d32 = 3.6 pm/V; d33 = 8.3 pm/VElectrical Resistivity around 1011-1012ohm·cm Hygroscopic no Static Half Wave Voltage at 1064 nm 4x4x20 mm: 1,600 V 6x6x20 mm: 2,400 V Transmitting range: 350~4500 nm Sellmeier equations(? in um) nx2=2.15559 + 0.93307[1-(0.20994/? )2] - 0.01452?2ny2=2.38494 + 0.73603[1-(0.23891/? )2] - 0.01583 ?2nz2=2.27723 + 1.11030[1-(0.23454/? )2] - 0.01995?2"

"

RTP (Rubidium Titanyle Phosphate - RbTiOPO4) is an isomorph of KTP crystal which is used in nonlinear and Electro Optical applications.

Through years of research and development, CRYSTECH has achieved great advances in growing techniques of RTP crystals. We are able to provide excellent RTP crystals both in matched pairs or single crystals. APPLICATION:? Q-switch (Laser Ranging, Laser Radar, medical laser, Industrial Laser)? Laser power/phase modulation? Pulse Picker ADVANTAGE:? An excellent crystal for Electro Optical applications at high repetition rate? Large nonlinear optical and electro-optical coefficients? Low half-wave voltage? No Piezoelectric Ringing? high damage threshold;? High Extinction Ratio? Non-hygroscopic Dimension Tolerance W(+/-0.1) * H(+/-0.1) * L(+0.5/-0.1) mm Angle Tolerance +/-0.15° Perpendicularity =10'Scratch / Dig 20/10 Chamfer =0.2mmx45°Parallelism =5? Chip =0.1mm Flatness ?/10@633nm CA =90%TWD ?/6@633nm Electrode Ti or AuExtinction Ratio >20dB Coating AR@1064nm(R<0.2%), or customized upon request Damage Threshold 600MW/cm² 10ns 10Hz at 1064nmType Size of Single Crystal(mm) Length of Holder(mm) Half-wave voltage(V)QR2205A 2X2X5 12 1600VQR3305A 3X3X5 14 2400VQR4405A 4X4X5 14 3200VQR4410A 4X4X10 25 1600VQR6605A 6X6X5 14 4800VQR6610A 6X6X10 25 2400VQR8805A 8X8X5 14 6400VQR8810A 8X8X10 25 3200VQR1005A 10X10X5 14 8000VPhysical and Optical Properties Crystal structure Orthorhombic Cell Parameters a = 12.96 Å; b =10.56 Å; c =6.49 ÅMohs hardness 5Density, g/cm3 3.6Melting Point: ~ 1000°CFerroeletric transition temp. ~ 810°CColor Colorless Thermal Expansion Coefficients (/K) ax=1.01x10-5, ay =1.37x10-5, az =-4.17x10-6Dielectric Constant Eeff= 13.0Thermo-optical coefficients (d?/dT) -0.029 nm / °CElectro-optic constants Y-cut: r51=38.5 pm/V X-cut: r33=35 pm/V,r23=12.5 pm/V, r13=10.6 pm/VNonlinear Coefficients: d15 = 2.0 pm/V; d24 = 3.6 pm/V; d31= 2.0 pm/V d32 = 3.6 pm/V; d33 = 8.3 pm/VElectrical Resistivity around 1011-1012ohm·cm Hygroscopic no Static Half Wave Voltage at 1064 nm 4x4x20 mm: 1,600 V 6x6x20 mm: 2,400 V Transmitting range: 350~4500 nm Sellmeier equations(? in um) nx2=2.15559 + 0.93307[1-(0.20994/?)2] - 0.01452?2ny2=2.38494 + 0.73603[1-(0.23891/?)2] - 0.01583 ?2nz2=2.27723 + 1.11030[1-(0.23454/?)2] - 0.01995?2"

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  CRYSTECH, Inc.
Product Category Laser Processing Equipment
Product Name RTP Q-Switch Crystals Components
Type Component or Subsystem
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