Wolfspeed 500-W, 2700 to 3100-MHz, 50-Ohm Input/Output-Matched GaN HEMT for S-Band Radar Systems CGHV31500F

Description
Wolfspeed’s CGHV31500F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 – 3.1-GHz s-band radar-amplifier applications. The transistor is supplied in a ceramic/metal-flange package, type 440217.
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Description
Wolfspeed’s CGHV31500F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 – 3.1-GHz s-band radar-amplifier applications. The transistor is supplied in a ceramic/metal-flange package, type 440217.
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500-W, 2700 to 3100-MHz, 50-Ohm Input/Output-Matched GaN HEMT for S-Band Radar Systems - CGHV31500F - Wolfspeed
Durham, NC, United States
500-W, 2700 to 3100-MHz, 50-Ohm Input/Output-Matched GaN HEMT for S-Band Radar Systems
CGHV31500F
500-W, 2700 to 3100-MHz, 50-Ohm Input/Output-Matched GaN HEMT for S-Band Radar Systems CGHV31500F
Wolfspeed’s CGHV31500F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 – 3.1-GHz s-band radar-amplifier applications. The transistor is supplied in a ceramic/metal-flange package, type 440217.

Wolfspeed’s CGHV31500F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 – 3.1-GHz s-band radar-amplifier applications. The transistor is supplied in a ceramic/metal-flange package, type 440217.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - 1325243-CGHV31500F - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF
1325243-CGHV31500F
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF 1325243-CGHV31500F
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1325243-CGHV31500F Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Packaging: Tray Standard Package: 25 Voltage - Rated: 125 V Frequency: 2.7GHz ~ 3.1GHz Current - Test: 500 mA Gain: 13.5dB Transistor Type: HEMT Voltage - Test: 50 V Power - Output: 500W Supplier Device Package: 440217 Case / Package: 440217 ECCN: DISC 3A001B3 Fake Threat In the Open Market: 75 MSL Level: 1 (Unlimited) Current Rating (Amps): 24A HTSUS: 8541.29.0075 Base Product Number: CGHV31500 RoHS Status: RoHS Compliant

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325243-CGHV31500F
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Packaging: Tray
Standard Package: 25
Voltage - Rated: 125 V
Frequency: 2.7GHz ~ 3.1GHz
Current - Test: 500 mA
Gain: 13.5dB
Transistor Type: HEMT
Voltage - Test: 50 V
Power - Output: 500W
Supplier Device Package: 440217
Case / Package: 440217
ECCN: DISC 3A001B3
Fake Threat In the Open Market: 75
MSL Level: 1 (Unlimited)
Current Rating (Amps): 24A
HTSUS: 8541.29.0075
Base Product Number: CGHV31500
RoHS Status: RoHS Compliant

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Technical Specifications

  Wolfspeed Win Source Electronics
Product Category RF Transistors RF MOSFET Transistors
Product Number CGHV31500F 1325243-CGHV31500F
Product Name 500-W, 2700 to 3100-MHz, 50-Ohm Input/Output-Matched GaN HEMT for S-Band Radar Systems Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF
Transistor Technology / Material GaN
Power Gain 12.75 dB 13.5 dB
Output Power 500 watts 500 watts
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