Wolfspeed 70-W, 0.5-3.0 GHz, GaN HEMT CG2H30070F

Description
Wolfspeed’s CG2H30070F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from 0.5-3.0 GHz. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flanged package for optimal electrical and thermal performance. Features: Input matched for instantaneous operation from 500 – 3000 MHz 70 W (CW) minimum Pout 80 W (CW) typical Pout 16 dB Typical Small Signal Gain 28 V Operation Application Circuit Available using 2x CG2H30070F for 100 W (CW) at 85°C case temperature
  • 70-W, 0.5-3.0 GHz, GaN HEMT - CG2H30070F - Wolfspeed
    Wolfspeed
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - CG2H30070F - 866346-CG2H30070F - Win Source Electronics
    Win Source Electronics
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Description
Wolfspeed’s CG2H30070F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from 0.5-3.0 GHz. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flanged package for optimal electrical and thermal performance. Features: Input matched for instantaneous operation from 500 – 3000 MHz 70 W (CW) minimum Pout 80 W (CW) typical Pout 16 dB Typical Small Signal Gain 28 V Operation Application Circuit Available using 2x CG2H30070F for 100 W (CW) at 85°C case temperature
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70-W, 0.5-3.0 GHz, GaN HEMT - CG2H30070F - Wolfspeed
Wolfspeed
Durham, NC, United States
70-W, 0.5-3.0 GHz, GaN HEMT
CG2H30070F
70-W, 0.5-3.0 GHz, GaN HEMT CG2H30070F
Wolfspeed’s CG2H30070F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from 0.5-3.0 GHz. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flanged package for optimal electrical and thermal performance. Features: Input matched for instantaneous operation from 500 – 3000 MHz 70 W (CW) minimum Pout 80 W (CW) typical Pout 16 dB Typical Small Signal Gain 28 V Operation Application Circuit Available using 2x CG2H30070F for 100 W (CW) at 85°C case temperature

Wolfspeed’s CG2H30070F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from 0.5-3.0 GHz. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flanged package for optimal electrical and thermal performance.

Features:

  • Input matched for instantaneous operation from 500 – 3000 MHz
  • 70 W (CW) minimum Pout
  • 80 W (CW) typical Pout
  • 16 dB Typical Small Signal Gain
  • 28 V Operation
  • Application Circuit Available using 2x CG2H30070F for 100 W (CW) at 85°C case temperature
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CG2H30070F - 866346-CG2H30070F - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CG2H30070F
866346-CG2H30070F
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CG2H30070F 866346-CG2H30070F
Manufacturer: Cree/Wolfspeed Win Source Part Number: 866346-CG2H30070F Series: GaN Features: RF Mosfet HEMT 28 V - - 75W Package: Tray Family Name: CG2H30070 Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited Quantity per package: 50 MSL Level: Not Applicable Estimated Pruduction Lead Time: 23 Weeks HTSUS: 8541.29.0095

Manufacturer: Cree/Wolfspeed
Win Source Part Number: 866346-CG2H30070F
Series: GaN
Features: RF Mosfet HEMT 28 V - - 75W
Package: Tray
Family Name: CG2H30070
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Quantity per package: 50
MSL Level: Not Applicable
Estimated Pruduction Lead Time: 23 Weeks
HTSUS: 8541.29.0095

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Technical Specifications

  Wolfspeed Win Source Electronics
Product Category RF Transistors RF MOSFET Transistors
Product Number CG2H30070F 866346-CG2H30070F
Product Name 70-W, 0.5-3.0 GHz, GaN HEMT TRANSISTORS - Transistors - FETs, MOSFETs - RF - CG2H30070F
Transistor Technology / Material GaN
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