Wolfspeed 10-A, 600-V, Z-Rec® Schottky, TO-220 package C3D10060A

Diode Silicon Carbide Schottky 600V 30A (DC) Through Hole TO-220-2

Schottky Diode,Z-Rec,SiC,10A,600V,TO-220

Manufacturer: Cree Inc.
Win Source Part Number: 012595-C3D10060A
Category: Discrete Semiconductor Products
Family: Diodes - Rectifiers - Single
Series: Z-Rec
Packaging: Tube
Mounting Style: Through Hole
Speed: No Recovery Time > 500mA (Io)
Package: TO-220-2
Manufacturer Device Package: TO-220-2
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50μA @ 600V
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Operating Temperature - Junction: -55°C ~ 175°C
Family Name: C3D10060A
Alternative Parts (Cross-Reference): SCS110AGC; SCS310AP; SCS310APC9;
Introduction Date: September 02, 2011
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2023
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Schottky Rectifier Diode 600V 29.5A TO-220 Through Hole Product overview: C3D10060A from Wolfspeed is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Schottky, Through-Hole, 600V, 29.5A, TO-220. Search-friendly keywords include diode, rectifier, Schottky, switching diode, Through-Hole, 600V, 29.5A, Diode and Rectifier, Single Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 280-C3D10060A can be used for catalog matching and distributor lookup.

DIODE SIL CARB 600V 30A TO220-2

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.

Features

• Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
• Zero Reverse Recovery Current / Forward Recovery Voltage
• Temperature-Independent Switching Behavior

Applications

• Industrial Switched Mode Power Supplies
• Uninterruptible and AUX Power Supplies
• Boost for PFC and DC-DC Stages
• Solar Inverters