Comchip Technology Corporation Bipolar Transistors - BJT MMST3906-G

The MMST3906-G is a PNP general-purpose bipolar transistor in an SOT-323 surface-mount package measuring 2.20 mm × 1.30 mm × 0.80 mm. It has a collector-base and collector-emitter voltage rating of -40 V, a maximum collector current of -200 mA, and a power dissipation of 200 mW. Thermal resistance is 625 °C/W, with a junction temperature limit of 150 °C. DC current gain ranges from 60 to 300 at VCE = -1 V. Collector-emitter saturation voltage is -0.2 V at IC = -10 mA and IB = -1 mA. Transition frequency is 250 MHz. Output and input capacitances are 4.5 pF and 10 pF. Packaged in reels of 3,000 units.