Comchip Technology Corporation Single FETs, MOSFETs 2N7002W-HF

The 2N7002W is an N-channel enhancement mode MOSFET designed for high-efficiency power management applications, featuring a 60 V drain-source voltage rating, a maximum continuous drain current of 115 mA at 25°C, and an on-resistance of 7.5 Ω at VGS = 5 V. It is packaged in an SOT-323 surface-mount case measuring 2.00 mm × 2.225 mm × 1.25 mm, with a thermal resistance of 625 °C/W and power dissipation of 200 mW. The device meets RoHS and UL 94 V-0 standards, is halogen- and antimony-free, and is qualified to AEC-Q101 for automotive applications. It operates over a junction temperature range of -55°C to +150°C and has a gate threshold voltage of 1.0 V to 2.0 V.