Coilcraft, Inc. SMT Gate Drive Transformer FA2659-AL FA2659-ALC

Description
Designed for transformer coupled MOSFETand IGBT gate drive circuits Specified by Texas Instruments for its POE+PHYTEREV-I/-E evaluation board Specified by Microsemi for its PD70211EVB51F-12 evaluation board Operating frequency from 50 kHz to 2 MHz Space saving surface mount package
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Description
Designed for transformer coupled MOSFETand IGBT gate drive circuits Specified by Texas Instruments for its POE+PHYTEREV-I/-E evaluation board Specified by Microsemi for its PD70211EVB51F-12 evaluation board Operating frequency from 50 kHz to 2 MHz Space saving surface mount package
Request a Quote
Datasheet
Datasheet Summary
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SMT gate drive transformer designed for MOSFET and IGBT gate drive circuits operating from 50 kHz to 2 MHz, with a footprint of 56 mm². Surface mount package measures 7.85 mm × 7.25 mm × 0.285 mm, housed in EIA-481 embossed plastic tape on 7″ or 13″ reels. Rated for ambient and storage temperatures from -40°C to +125°C, with MSL 1 moisture sensitivity and resistance to three reflow cycles at 260°C. Primary to secondary isolation is 2250 VDC / 1591 Vrms, primary leakage inductance is 0.795 µH max, and resonant frequency is 1.39 MHz min. RoHS compliant tin-silver over tin over nickel over phosphor bronze terminations. Weight is 700 mg.

Datasheet Summary
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SMT gate drive transformer designed for MOSFET and IGBT gate drive circuits operating from 50 kHz to 2 MHz, with a footprint of 56 mm². Surface mount package measures 7.85 mm × 7.25 mm × 0.285 mm, housed in EIA-481 embossed plastic tape on 7″ or 13″ reels. Rated for ambient and storage temperatures from -40°C to +125°C, with MSL 1 moisture sensitivity and resistance to three reflow cycles at 260°C. Primary to secondary isolation is 2250 VDC / 1591 Vrms, primary leakage inductance is 0.795 µH max, and resonant frequency is 1.39 MHz min. RoHS compliant tin-silver over tin over nickel over phosphor bronze terminations. Weight is 700 mg.

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SMT Gate Drive Transformer - FA2659-AL FA2659-ALC - Coilcraft, Inc.
Cary, IL, USA
SMT Gate Drive Transformer
FA2659-AL FA2659-ALC
SMT Gate Drive Transformer FA2659-AL FA2659-ALC
Designed for transformer coupled MOSFETand IGBT gate drive circuits Specified by Texas Instruments for its POE+PHYTEREV-I/-E evaluation board Specified by Microsemi for its PD70211EVB51F-12 evaluation board Operating frequency from 50 kHz to 2 MHz Space saving surface mount package
  • Designed for transformer coupled MOSFETand IGBT gate drive circuits
  • Specified by Texas Instruments for its POE+PHYTEREV-I/-E evaluation board
  • Specified by Microsemi for its PD70211EVB51F-12 evaluation board
  • Operating frequency from 50 kHz to 2 MHz
  • Space saving surface mount package
Supplier's Site Datasheet

Technical Specifications

  Coilcraft, Inc.
Product Category Power Transformers
Product Number FA2659-AL FA2659-ALC
Product Name SMT Gate Drive Transformer
Transformer Type Isolation
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