Central Semiconductor Corp. Bipolar Transistors - BJT TIP42C

The TIP42C is a PNP silicon power transistor in a TO-220 package, designed for power amplifier and high-speed switching applications. It has a collector-base voltage rating of 100 V, a collector-emitter voltage rating of 100 V, a continuous collector current of 6.0 A, and a power dissipation of 65 W. The emitter-base voltage is 5.0 V, and the operating and storage junction temperature range is -65 to +150 °C. The transistor has a collector-emitter saturation voltage of 1.5 V at IC=6.0 A and IB=0.6 A, and a base-emitter ON voltage of 2.0 V at IC=6.0 A. Current gain (hFE) ranges from 15 to 75 at IC=3.0 A. The transition frequency is 3.0 MHz, with turn-on and turn-off times of 0.4 μs and 0.7 μs respectively under specified conditions.