Central Semiconductor Corp. Bipolar Transistors - BJT TIP42

The TIP42 is a PNP silicon power transistor in a TO-220 package, designed for power amplifier and high-speed switching applications. It has a collector-base voltage rating of 40 V, a collector-emitter voltage rating of 40 V, and an emitter-base voltage rating of 5.0 V. The device supports a continuous collector current of 6.0 A and a peak collector current of 10 A, with a maximum power dissipation of 65 W. The operating and storage junction temperature range is -65 to +150 °C. The TO-220 case features base, collector, and emitter leads, with the tab connected to the collector. Electrical characteristics include a saturation voltage of 1.5 V at 6.0 A collector current and a current gain (hFE) of 30 at 0.3 A collector current. The transition frequency is 3.0 MHz at 0.5 A collector current.