Central Semiconductor Corp. Bipolar Transistors - BJT TIP41C

The TIP41C is an NPN silicon power transistor in a TO-220 package designed for power amplifier and high-speed switching applications. It has a collector-base voltage rating of 100 V, a collector-emitter voltage rating of 100 V, a continuous collector current of 6.0 A, and a power dissipation of 65 W. The device features a collector-emitter saturation voltage of 1.5 V at 6.0 A collector current and 0.6 A base current, and a base-emitter on-voltage of 2.0 V under the same conditions. The current gain (hFE) ranges from 15 to 75 at 3.0 A collector current. The transition frequency is 3.0 MHz. The operating and storage junction temperature range is -65 to +150 °C.