Central Semiconductor Corp. Bipolar Transistors - BJT TIP41A

The TIP41A is an NPN silicon power transistor in a TO-220 package, designed for power amplifier and high-speed switching applications. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 6.0 A, and a power dissipation of 65 W at TC=25°C. The junction temperature range is -65 to +150°C. The collector-emitter saturation voltage is 1.5 V at IC=6.0 A and IB=0.6 A, with a forward current gain of 15 to 75 at IC=3.0 A and VCE=4.0 V. The transition frequency is 3.0 MHz at IC=0.5 A and VCE=10 V.