Central Semiconductor Corp. Bipolar Transistors - BJT TIP41

The TIP41 is an NPN silicon power transistor in a TO-220 package designed for power amplifier and high-speed switching applications. It has a collector-base voltage rating of 40 V, a collector-emitter voltage rating of 40 V, and an emitter-base voltage rating of 5.0 V. The device supports a continuous collector current of 6.0 A and a power dissipation of 65 W at TC=25°C. Operating and storage junction temperatures range from -65°C to +150°C. The transistor features a collector-emitter saturation voltage of 1.5 V at IC=6.0 A and IB=0.6 A, with a minimum DC current gain of 30 at IC=0.3 A and VCE=4.0 V. Transition frequency is 3.0 MHz at IC=0.5 A and VCE=10 V. Turn-on and turn-off times are 0.6 μs and 1.0 μs respectively under specified switching conditions.