Central Semiconductor Corp. Single Bipolar Transistors TIP36B

The TIP36B is a PNP silicon power transistor in a TO-218 package, designed for high current amplifier and switching applications. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 25 A, and a power dissipation of 125 W. The thermal resistance from junction to case is 1.0 °C/W. The collector-emitter saturation voltage is 4.0 V at a collector current of 25 A and base current of 5.0 A. The base-emitter on voltage is 4.5 V at a collector current of 25 A. The gain (hFE) ranges from 10 to 100 at a collector current of 15 A. The transition frequency is 3.0 MHz. The operating and storage junction temperature range is -65 to +150 °C.