Central Semiconductor Corp. Single Bipolar Transistors TIP35C

Description
Bipolar (BJT) Transistor NPN 100V 25A 3MHz 125W Through Hole TO-218
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Description
Bipolar (BJT) Transistor NPN 100V 25A 3MHz 125W Through Hole TO-218
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Datasheet
Datasheet Summary
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The TIP35C is an NPN silicon power transistor in a TO-218 package, designed for high-current amplifier and switching applications. It has a collector-emitter voltage rating of 100 V, a continuous collector current of 25 A, and a power dissipation of 125 W. The thermal resistance from junction to case is 1.0 °C/W, and the operating and storage junction temperature range is -65 to +150 °C. The device has a transition frequency of 3.0 MHz and a current gain (hFE) of 10 to 100 at IC=15 A and VCE=4.0 V. The TO-218 package is discontinued and classified as End of Life, with the TIP35C being replaced by the same part number in a TO-247 package.

Datasheet Summary
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The TIP35C is an NPN silicon power transistor in a TO-218 package, designed for high-current amplifier and switching applications. It has a collector-emitter voltage rating of 100 V, a continuous collector current of 25 A, and a power dissipation of 125 W. The thermal resistance from junction to case is 1.0 °C/W, and the operating and storage junction temperature range is -65 to +150 °C. The device has a transition frequency of 3.0 MHz and a current gain (hFE) of 10 to 100 at IC=15 A and VCE=4.0 V. The TO-218 package is discontinued and classified as End of Life, with the TIP35C being replaced by the same part number in a TO-247 package.

Suppliers

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Product
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Single Bipolar Transistors - TIP35CCS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
TIP35CCS-ND
Single Bipolar Transistors TIP35CCS-ND
Bipolar (BJT) Transistor NPN 100V 25A 3MHz 125W Through Hole TO-218

Bipolar (BJT) Transistor NPN 100V 25A 3MHz 125W Through Hole TO-218

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number TIP35CCS-ND
Product Name Single Bipolar Transistors
Polarity NPN
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