Central Semiconductor Corp. Single Bipolar Transistors TIP35B

The TIP35B is an NPN silicon power transistor in a TO-218 package, designed for high-current amplifier and switching applications. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 25 A, and a power dissipation of 125 W. The thermal resistance junction-to-case is 1.0 °C/W. The device has a transition frequency of 3.0 MHz and a DC current gain (hFE) ranging from 10 to 100 at a collector current of 15 A. The collector-emitter saturation voltage is 4.0 V at a collector current of 25 A and base current of 5.0 A. The operating and storage junction temperature range is -65 °C to +150 °C. All TO-218 packaged devices in this series are classified as End of Life (EOL), with replacements planned in the TO-247 package.