Central Semiconductor Corp. Bipolar Transistors - BJT TIP32B

The TIP32B is a silicon PNP power transistor in a TO-220 package for power amplifier and high-speed switching applications. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 3.0 A, and a power dissipation of 40 W at TC=25°C. The thermal resistance from junction to case is 3.13 °C/W. The collector-emitter saturation voltage is 1.2 V at IC=3.0 A and IB=375 mA. The DC current gain (hFE) ranges from 10 to 50 at IC=3.0 A and VCE=4.0 V. The operating and storage junction temperature range is -65 to +150 °C. The device meets RoHS compliance and is marked with its full part number on the case.