Central Semiconductor Corp. Bipolar Transistors - BJT TIP32

The TIP32 is a silicon PNP power transistor designed for power amplifier and high-speed switching applications. It is packaged in a TO-220 case with a base, collector, and emitter pinout, where the tab is electrically connected to the collector. The device has a continuous collector current rating of 3.0 A, a collector-emitter voltage rating of 40 V, and a power dissipation of 40 W at TC=25°C. Thermal resistance from junction to case is 3.13 °C/W. The operating and storage junction temperature range is -65 to +150 °C. Current gain (hFE) ranges from 10 to 50 at IC=3.0 A and VCE=4.0 V. Saturation voltage is 1.2 V at IC=3.0 A and IB=375 mA. Switching times are 0.3 µs turn-on and 1.0 µs turn-off under specified test conditions.