Central Semiconductor Corp. Single Bipolar Transistors TIP31C TIN/LEAD

The TIP31C is a silicon NPN epitaxial-base power transistor for power amplifier and high-speed switching applications, housed in a TO-220 package with dimensions of 14.23 to 15.87 mm in length, 12.70 to 14.70 mm in width, and 6.35 mm lead length. It has a collector-emitter voltage rating of 100 V, a continuous collector current of 3.0 A, and a power dissipation of 40 W at TC=25°C. The device features a thermal resistance from junction to case of 3.13 °C/W and operates within a junction temperature range of -65°C to +150°C. Collector-emitter saturation voltage is 1.2 V at 3.0 A collector current and 375 mA base current. The part is bulk packed in quantities of 500.