Central Semiconductor Corp. Bipolar Transistors - BJT TIP31C SL

Description
Bipolar Transistors - BJT 100Vcbo 100Vceo 5.0Vebo 3.0A 40W
Description
Bipolar Transistors - BJT 100Vcbo 100Vceo 5.0Vebo 3.0A 40W
Datasheet
Datasheet Summary
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The TIP31C is a silicon NPN power transistor in a TO-220 package designed for power amplification and high-speed switching applications. It has a collector-emitter voltage rating of 100 V, a continuous collector current of 3.0 A, and a power dissipation of 40 W. The device has a thermal resistance from junction to case of 3.13 °C/W and operates over a junction temperature range of -65 to +150 °C. The TO-220 package features a collector tab, with pinout: base, collector, emitter. The part meets no specified industry standards beyond its electrical and thermal ratings.

Datasheet Summary
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The TIP31C is a silicon NPN power transistor in a TO-220 package designed for power amplification and high-speed switching applications. It has a collector-emitter voltage rating of 100 V, a continuous collector current of 3.0 A, and a power dissipation of 40 W. The device has a thermal resistance from junction to case of 3.13 °C/W and operates over a junction temperature range of -65 to +150 °C. The TO-220 package features a collector tab, with pinout: base, collector, emitter. The part meets no specified industry standards beyond its electrical and thermal ratings.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
TIP31C SL
Bipolar Transistors - BJT TIP31C SL
Bipolar Transistors - BJT 100Vcbo 100Vceo 5.0Vebo 3.0A 40W

Bipolar Transistors - BJT 100Vcbo 100Vceo 5.0Vebo 3.0A 40W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number TIP31C SL
Product Name Bipolar Transistors - BJT
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