Central Semiconductor Corp. Bipolar Transistors - BJT TIP31B

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Bipolar Transistors - BJT NPN Gen Purp Power
Description
Bipolar Transistors - BJT NPN Gen Purp Power
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The TIP31B is an NPN bipolar junction transistor in a TO-220 package with a continuous collector current of 3.0 A, power dissipation of 40 W, collector-emitter breakdown voltage of 80 V, DC current gain (hFE) between 10 and 50 at 3.0 A and 3.0 V, collector-emitter saturation voltage of 1.2 V at 3.0 A, and transition frequency of 3.0 MHz.

Datasheet Summary
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The TIP31B is an NPN bipolar junction transistor in a TO-220 package with a continuous collector current of 3.0 A, power dissipation of 40 W, collector-emitter breakdown voltage of 80 V, DC current gain (hFE) between 10 and 50 at 3.0 A and 3.0 V, collector-emitter saturation voltage of 1.2 V at 3.0 A, and transition frequency of 3.0 MHz.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
TIP31B
Bipolar Transistors - BJT TIP31B
Bipolar Transistors - BJT NPN Gen Purp Power

Bipolar Transistors - BJT NPN Gen Purp Power

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number TIP31B
Product Name Bipolar Transistors - BJT
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