Central Semiconductor Corp. Bipolar Transistors - BJT TIP30C

The TIP30C is a silicon PNP power transistor in a TO-220 package designed for power amplifier and high-speed switching applications. It has a collector-emitter voltage rating of 100 V, a continuous collector current of 1.0 A, and a power dissipation of 30 W at TC=25°C. The device features a peak collector current of 3.0 A, a collector-emitter saturation voltage of 0.7 V at IC=1.0 A and IB=125 mA, and a DC current gain (hFE) range of 15 to 75 at IC=1.0 A. The operating and storage junction temperature range is -65°C to +150°C. The TO-220 package has its collector connected to the tab, with base, collector, and emitter as pins 1, 2, and 3 respectively.