Central Semiconductor Corp. Bipolar Transistors - BJT TIP30B

The TIP30B is a silicon PNP epitaxial-base power transistor designed for power amplifier and high speed switching applications, housed in a TO-220 package. It features a collector-emitter voltage rating of 80 V, a continuous collector current of 1.0 A, and a power dissipation of 30 W at TC=25°C. The device has a collector-emitter saturation voltage of 0.7 V at IC=1.0 A and IB=125 mA, with a DC current gain (hFE) ranging from 15 to 75 at IC=1.0 A and VCE=4.0 V. The operating and storage junction temperature spans from -65°C to +150°C.