Central Semiconductor Corp. Bipolar Transistors - BJT TIP30A

The TIP30A is a silicon PNP power transistor in a TO-220 package, designed for power amplifier and high-speed switching applications. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 1.0 A, and a power dissipation of 30 W at TC=25°C. The device features a collector-base voltage of 60 V, an emitter-base voltage of 5.0 V, and a peak collector current of 3.0 A. Operating and storage junction temperatures range from -65 °C to +150 °C. Electrical characteristics include a saturation voltage of 0.7 V at IC=1.0 A and IB=125 mA, and a current gain (hFE) of 15 to 75 at IC=1.0 A. The transition frequency is 3.0 MHz, with turn-on and turn-off times of 0.3 µs and 1.0 µs respectively.