Central Semiconductor Corp. Bipolar Transistors - BJT TIP30

The TIP30 is a silicon PNP power transistor in a TO-220 package, designed for power amplifier and high-speed switching applications. It has a collector-base and collector-emitter voltage rating of 40 V, a continuous collector current of 1.0 A, and a power dissipation of 30 W at TC=25°C, or 2.0 W at TA=25°C. The operating and storage junction temperature ranges from -65°C to +150°C. Electrical characteristics include a collector-emitter saturation voltage of 0.7 V at IC=1.0 A and IB=125 mA, and a DC current gain (hFE) of 15 to 75 at IC=1.0 A. The device has a transition frequency of 3.0 MHz and switching times of 0.3 μs turn-on and 1.0 μs turn-off. The TO-220 package has pin 1 as the base, pin 2 as the collector, pin 3 as the emitter, and the tab connected to the collector.