Central Semiconductor Corp. Single Bipolar Transistors TIP141

Description
Bipolar (BJT) Transistor NPN 80V 10A 125W Through Hole TO-218
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Description
Bipolar (BJT) Transistor NPN 80V 10A 125W Through Hole TO-218
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Datasheet
Datasheet Summary
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The TIP141 is an NPN silicon power Darlington transistor in a TO-218 package, designed for general purpose amplifier and low speed switching applications requiring high gain. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 10 A, and a power dissipation of 125 W. The thermal resistance from junction to case is 1.0 °C/W, and the operating and storage junction temperature range is -65 to +150 °C. The saturation voltage is 3.0 V at 10 A collector current and 40 mA base current, with a minimum DC current gain of 500 at 10 A. The package features a collector tab bonded to the collector terminal.

Datasheet Summary
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The TIP141 is an NPN silicon power Darlington transistor in a TO-218 package, designed for general purpose amplifier and low speed switching applications requiring high gain. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 10 A, and a power dissipation of 125 W. The thermal resistance from junction to case is 1.0 °C/W, and the operating and storage junction temperature range is -65 to +150 °C. The saturation voltage is 3.0 V at 10 A collector current and 40 mA base current, with a minimum DC current gain of 500 at 10 A. The package features a collector tab bonded to the collector terminal.

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - TIP141CS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
TIP141CS-ND
Single Bipolar Transistors TIP141CS-ND
Bipolar (BJT) Transistor NPN 80V 10A 125W Through Hole TO-218

Bipolar (BJT) Transistor NPN 80V 10A 125W Through Hole TO-218

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number TIP141CS-ND
Product Name Single Bipolar Transistors
Polarity NPN
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