Central Semiconductor Corp. Bipolar Transistors - BJT PN918

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Bipolar Transistors - BJT NPN Gen Pur SW
Description
Bipolar Transistors - BJT NPN Gen Pur SW
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The PN918 is an NPN silicon RF transistor in a TO-72 package, designed for high-frequency amplifier and oscillator applications. It has a collector-base voltage rating of 30 V, collector-emitter voltage of 15 V, and continuous collector current of 50 mA. Power dissipation is 200 mW at 25°C ambient temperature, with a thermal resistance of 87.5 °C/W. The transistor features a transition frequency of 600 MHz at 10 V and 4 mA, collector capacitance of 1.7 pF at 10 V, and current gain of 20 at 3 mA. Operating and storage junction temperatures range from -65°C to +200°C.

Datasheet Summary
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The PN918 is an NPN silicon RF transistor in a TO-72 package, designed for high-frequency amplifier and oscillator applications. It has a collector-base voltage rating of 30 V, collector-emitter voltage of 15 V, and continuous collector current of 50 mA. Power dissipation is 200 mW at 25°C ambient temperature, with a thermal resistance of 87.5 °C/W. The transistor features a transition frequency of 600 MHz at 10 V and 4 mA, collector capacitance of 1.7 pF at 10 V, and current gain of 20 at 3 mA. Operating and storage junction temperatures range from -65°C to +200°C.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
PN918
Bipolar Transistors - BJT PN918
Bipolar Transistors - BJT NPN Gen Pur SW

Bipolar Transistors - BJT NPN Gen Pur SW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number PN918
Product Name Bipolar Transistors - BJT
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