Central Semiconductor Corp. Bipolar Transistors - BJT PN3638A

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Bipolar Transistors - BJT PNP Gen Pur SS
Description
Bipolar Transistors - BJT PNP Gen Pur SS
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PN3638A is a PNP bipolar junction transistor designed for amplification and switching applications. It features an EBC lead configuration, a collector-emitter voltage rating of 25 V, a collector-base voltage rating of 25 V, and an emitter-base voltage rating of 4.0 V. The device has a maximum DC current gain (hFE) of 100 at a collector-emitter voltage of 15 V and a collector current of 1.0 mA. It exhibits a collector-emitter saturation voltage of 1.0 V at 300 mA collector current, a collector-base capacitance of 10 pF, and a transition frequency of 150 MHz. The thermal resistance from junction to ambient is 170 °C/W. It complies with RoHS requirements.

Datasheet Summary
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PN3638A is a PNP bipolar junction transistor designed for amplification and switching applications. It features an EBC lead configuration, a collector-emitter voltage rating of 25 V, a collector-base voltage rating of 25 V, and an emitter-base voltage rating of 4.0 V. The device has a maximum DC current gain (hFE) of 100 at a collector-emitter voltage of 15 V and a collector current of 1.0 mA. It exhibits a collector-emitter saturation voltage of 1.0 V at 300 mA collector current, a collector-base capacitance of 10 pF, and a transition frequency of 150 MHz. The thermal resistance from junction to ambient is 170 °C/W. It complies with RoHS requirements.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
PN3638A
Bipolar Transistors - BJT PN3638A
Bipolar Transistors - BJT PNP Gen Pur SS

Bipolar Transistors - BJT PNP Gen Pur SS

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number PN3638A
Product Name Bipolar Transistors - BJT
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