Central Semiconductor Corp. Bipolar Transistors - BJT PN3565 TIN/LEAD

The PN3565 TIN/LEAD is an NPN silicon epitaxial planar transistor in a TO-92 package, designed for low-noise applications. It has a collector-base voltage rating of 30 V, collector-emitter voltage of 25 V, emitter-base voltage of 6.0 V, continuous collector current of 50 mA, and power dissipation of 625 mW. The operating and storage junction temperature range is -65 to +150 °C, with thermal resistance of 200 °C/W. The device meets RoHS compliance for lead-tin plating. Electrical characteristics include hFE from 70 to 600, transition frequency (fT) from 40 to 240 MHz, and collector-emitter saturation voltage of 0.35 V under specified conditions.