Central Semiconductor Corp. Bipolar Transistors - BJT PN2906A

The PN2906A is a silicon PNP epitaxial planar transistor designed for small signal and general purpose switching applications. It is packaged in a TO-92 case with a maximum collector-emitter voltage of 60 V, a continuous collector current of 600 mA, and a power dissipation of 625 mW. The operating and storage junction temperature range is -65 to +150 °C, with a thermal resistance of 200 °C/W. Current gain (hFE) ranges from 40 to 75 at IC=0.1 mA, 40 to 100 at IC=1.0 mA, 40 to 100 at IC=10 mA, and 40 to 50 at IC=500 mA. Saturation voltage is 1.6 V at IC=500 mA and IB=50 mA. The transition frequency is 200 MHz. The device meets no specified industry standards beyond its electrical and thermal ratings.