Central Semiconductor Corp. Single Bipolar Transistors PN2369A TRE PBFREE

The PN2369A is an epitaxial planar NPN silicon transistor designed for ultra high speed saturated switching applications, housed in a TO-92 case. It has a collector-emitter voltage rating of 15 V, a continuous collector current of 200 mA, and a power dissipation of 350 mW. The transistor exhibits a current gain (hFE) of 40 to 120 at IC=10mA and VCE=1.0V, with saturation voltage VCE(sat) of 500 mV at IC=100mA and IB=10mA. It complies with RoHS for lead-free plating, as indicated by the PBFREE suffix. Transition frequency fT is 500 MHz at IC=10mA and VCE=10V. Operating and storage junction temperatures range from -65°C to +150°C.