Central Semiconductor Corp. Bipolar Transistors - BJT PN2222A

The PN2222A is a silicon NPN epitaxial planar transistor for general-purpose switching applications, packaged in TO-92. It has a collector-emitter voltage rating of 40 V, a collector-base voltage of 75 V, and a continuous collector current of 800 mA. Power dissipation is 625 mW, with an operating and storage junction temperature range of -65 to +150°C. Current gain (hFE) ranges from 100 to 300 at VCE=10 V and IC=150 mA, and 25 to 40 at VCE=10 V and IC=500 mA. Transition frequency is 300 MHz at VCE=20 V and IC=20 mA. Collector-emitter saturation voltage is 1.0 V at IC=500 mA and IB=50 mA. Base-emitter saturation voltage is 2.0 V under the same conditions. Collector cutoff current is 10 nA at VCB=60 V. Turn-on and turn-off times are 35 ns and 285 ns respectively. It meets RoHS compliance.