Central Semiconductor Corp. Bipolar Transistors - BJT PMD16K100

The PMD16K100 is an NPN silicon Darlington power transistor in a TO-3 case, designed for power switching applications. It has a collector-base voltage rating of 100 V, a collector-emitter voltage rating of 100 V, a continuous collector current of 20 A, and a power dissipation of 200 W. The thermal resistance from junction to case is 0.875 °C/W, and the operating and storage junction temperature range is -65 to +200 °C. The collector-emitter saturation voltage is 2.0 V at 10 A collector current and 40 mA base current, with a base-emitter saturation voltage of 2.8 V under the same conditions. The current gain (hFE) is between 1.0K and 20K at 10 A collector current and 3.0 V collector-emitter voltage. The transition frequency is 4.0 MHz at 7.0 A collector current. The device is hermetically sealed and features a TO-3 mechanical outline with the case serving as the collector terminal.