Central Semiconductor Corp. Bipolar Transistors - BJT MPSD54

Description
Bipolar Transistors - BJT PNP 40Vcbo 25Vcbo 10Vebo 100mA 100MHz
Description
Bipolar Transistors - BJT PNP 40Vcbo 25Vcbo 10Vebo 100mA 100MHz
Datasheet
Datasheet Summary
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PNP Darlington transistor in TO-92 case with 25V collector-emitter voltage, 10V emitter-base voltage, and 100mA collector current. Collector-base voltage is not specified. Collector-emitter saturation voltage is 1.0V at 100mA, current gain is 1,000 minimum, transition frequency is 100MHz, and maximum power dissipation is 625mW.

Datasheet Summary
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PNP Darlington transistor in TO-92 case with 25V collector-emitter voltage, 10V emitter-base voltage, and 100mA collector current. Collector-base voltage is not specified. Collector-emitter saturation voltage is 1.0V at 100mA, current gain is 1,000 minimum, transition frequency is 100MHz, and maximum power dissipation is 625mW.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MPSD54
Bipolar Transistors - BJT MPSD54
Bipolar Transistors - BJT PNP 40Vcbo 25Vcbo 10Vebo 100mA 100MHz

Bipolar Transistors - BJT PNP 40Vcbo 25Vcbo 10Vebo 100mA 100MHz

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number MPSD54
Product Name Bipolar Transistors - BJT
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